Study of plastically deformed semiconductors by means of positron annihilation

H. S. Leipner*, C. G. Hübner, J. Krüger, R. Krause-Rehberg

*Corresponding author for this work
2 Citations (Scopus)


Deformation-induced defects have been studied by means of positron annihilation. Temperature-dependent positron lifetime spectroscopy indicates the presence of dislocations acting as shallow positron traps. The decomposition of the lifetime spectra provides positron lifetime components related to vacancy clusters and mono- or divacancies. The correlation between positron measurements and electron paramagnetic resonance gives evidence that the GaAs antisite is formed during plastic deformation. The density of point defects is estimated for different deformation conditions.

Original languageEnglish
JournalMaterials Science Forum
Issue numberPART 2
Pages (from-to)981-986
Number of pages6
Publication statusPublished - 01.12.1997


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