Study of plastically deformed semiconductors by means of positron annihilation

H. S. Leipner; C. G. Hübner; J. Krüger; R. Krause-Rehberg

doi:10.4028/www.scientific.net/MSF.258-263.981

Study of plastically deformed semiconductors by means of positron annihilation

H. S. Leipner^*, C. G. Hübner, J. Krüger, R. Krause-Rehberg

^*Corresponding author for this work

Martin Luther University

2 Citations (Scopus)

Abstract

Deformation-induced defects have been studied by means of positron annihilation. Temperature-dependent positron lifetime spectroscopy indicates the presence of dislocations acting as shallow positron traps. The decomposition of the lifetime spectra provides positron lifetime components related to vacancy clusters and mono- or divacancies. The correlation between positron measurements and electron paramagnetic resonance gives evidence that the Ga_As antisite is formed during plastic deformation. The density of point defects is estimated for different deformation conditions.

Original language	English
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 2
Pages (from-to)	981-986
Number of pages	6
ISSN	0255-5476
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.258-263.981
Publication status	Published - 01.12.1997

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AB - Deformation-induced defects have been studied by means of positron annihilation. Temperature-dependent positron lifetime spectroscopy indicates the presence of dislocations acting as shallow positron traps. The decomposition of the lifetime spectra provides positron lifetime components related to vacancy clusters and mono- or divacancies. The correlation between positron measurements and electron paramagnetic resonance gives evidence that the GaAs antisite is formed during plastic deformation. The density of point defects is estimated for different deformation conditions.

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Study of plastically deformed semiconductors by means of positron annihilation

Abstract

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