Positron annihilation at dislocations and related point defects in semiconductors

H. S. Leipner*, C. G. Hübner, T. E.M. Staab, M. Haugk, R. Krause-Rehberg

*Corresponding author for this work
17 Citations (Scopus)


Dislocations act in semiconductors as combined positron traps, consisting of a shallow precursor state, which is related to regular parts of the dislocation line, and bound vacancy-like defects. The motion of dislocations during plastic deformation generates a high number of point defects. The clustering of vacancies to stable voids is regarded as a primary process of the jog dragging mechanism. Vacancy densities were quantitatively determined for different deformation conditions of GaAs.

Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Pages (from-to)377-382
Number of pages6
Publication statusPublished - 01.01.1999


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