Deformation induced defects in GaAs-the role of dislocations

In this paper, deformation induced defects in semiinsulating GaAs are studies by means of positron lifetime spectroscopy. Single-crystalline GaAs samples ar deformed in different deformation axes at different strain rates up to 10% strain. The spectra decomposition gives rise for the presence of vacancy defects and vacancy clusters after deformation. Temperature-dependent positron lifetime measurements show that dislocations can act as shallow positron traps. Annealing experiments illustrate that the dislocation line can trap point defects.