Deformation induced defects in GaAs-the role of dislocations

C. G. Hübner, H. S. Leipner, R. Krause Rehberg


In this paper, deformation induced defects in semiinsulating GaAs are studies by means of positron lifetime spectroscopy. Single-crystalline GaAs samples ar deformed in different deformation axes at different strain rates up to 10% strain. The spectra decomposition gives rise for the presence of vacancy defects and vacancy clusters after deformation. Temperature-dependent positron lifetime measurements show that dislocations can act as shallow positron traps. Annealing experiments illustrate that the dislocation line can trap point defects.
Original languageEnglish
JournalMaterials Science Forum
Issue number257
Pages (from-to)497-499
Number of pages3
Publication statusPublished - 01.09.1997


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