TY - JOUR
T1 - Defect investigations in plastically deformed gallium arsenide
AU - Leipner, H.S
AU - Hübner, C.G
AU - Grau, P
AU - Krause-Rehberg, R
PY - 1999/12/15
Y1 - 1999/12/15
N2 - The defect formation during plastic deformation of GaAs has been investigated by means of the analysis of stress–strain curves including relaxation experiments and positron lifetime spectroscopy. The deformation creates a mixture of dislocations and point defects, which contribute to the positron lifetime spectra. Vacancy clusters can already be formed at rather low deformation temperatures via jog dragging. The concentration of generated defects depends on the number of activated slip systems for single-slip or multiple-slip orientation of the deformation axis.
AB - The defect formation during plastic deformation of GaAs has been investigated by means of the analysis of stress–strain curves including relaxation experiments and positron lifetime spectroscopy. The deformation creates a mixture of dislocations and point defects, which contribute to the positron lifetime spectra. Vacancy clusters can already be formed at rather low deformation temperatures via jog dragging. The concentration of generated defects depends on the number of activated slip systems for single-slip or multiple-slip orientation of the deformation axis.
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-0342647353&origin=inward&txGid=a3896f9ea763d0413ad7afd2b48133e7
U2 - 10.1016/S0921-4526(99)00617-1
DO - 10.1016/S0921-4526(99)00617-1
M3 - Journal articles
SN - 0921-4526
VL - 273-274
SP - 710
EP - 713
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -
