Defect characterization in plastically deformed gallium arsenide

H. S. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg


The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.
Original languageEnglish
Title of host publicationProceedings of Semiconducting and Semi-Insulating Materials Conference
Number of pages4
Publication date01.04.1996
ISBN (Print)0-7803-3179-6
Publication statusPublished - 01.04.1996
EventProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials - Toulouse, France
Duration: 29.04.199603.05.1996


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