The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.
|Title of host publication||Proceedings of Semiconducting and Semi-Insulating Materials Conference|
|Number of pages||4|
|Publication status||Published - 01.04.1996|
|Event||Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials - Toulouse, France|
Duration: 29.04.1996 → 03.05.1996