Defect characterization in plastically deformed gallium arsenide

H. S. Leipner; C. Hubner; O. Storbeck; A. Polity; R. Krause-Rehberg

doi:10.1109/SIM.1996.571100

Defect characterization in plastically deformed gallium arsenide

H. S. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg

Institut für Physik

Abstract

The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.

Originalsprache	Englisch
Titel	Proceedings of Semiconducting and Semi-Insulating Materials Conference
Seitenumfang	4
Herausgeber (Verlag)	IEEE
Erscheinungsdatum	01.04.1996
Seiten	283-286
ISBN (Print)	0-7803-3179-6
DOIs	https://doi.org/10.1109/SIM.1996.571100
Publikationsstatus	Veröffentlicht - 01.04.1996
Veranstaltung	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials - Toulouse, Frankreich Dauer: 29.04.1996 → 03.05.1996

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10.1109/SIM.1996.571100

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@inproceedings{31162c92d11e4744952eb681d6bf6865,

title = "Defect characterization in plastically deformed gallium arsenide",

abstract = "The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.",

author = "Leipner, \{H. S.\} and C. Hubner and O. Storbeck and A. Polity and R. Krause-Rehberg",

year = "1996",

month = apr,

day = "1",

doi = "10.1109/SIM.1996.571100",

language = "English",

isbn = "0-7803-3179-6",

series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

publisher = "IEEE",

pages = "283--286",

booktitle = "Proceedings of Semiconducting and Semi-Insulating Materials Conference",

note = "Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 ; Conference date: 29-04-1996 Through 03-05-1996",

}

Leipner, HS, Hubner, C, Storbeck, O, Polity, A & Krause-Rehberg, R 1996, Defect characterization in plastically deformed gallium arsenide. in Proceedings of Semiconducting and Semi-Insulating Materials Conference. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, IEEE, S. 283-286, Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, Toulouse, Frankreich, 29.04.96. https://doi.org/10.1109/SIM.1996.571100

Defect characterization in plastically deformed gallium arsenide. / Leipner, H. S.; Hubner, C.; Storbeck, O. et al.
Proceedings of Semiconducting and Semi-Insulating Materials Conference. IEEE, 1996. S. 283-286 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC).

Publikation: Kapitel in Büchern/Berichten/Konferenzbänden › Konferenzbeitrag › Begutachtung

TY - GEN

T1 - Defect characterization in plastically deformed gallium arsenide

AU - Leipner, H. S.

AU - Hubner, C.

AU - Storbeck, O.

AU - Polity, A.

AU - Krause-Rehberg, R.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.

AB - The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.

UR - https://www.scopus.com/pages/publications/0030413938

U2 - 10.1109/SIM.1996.571100

DO - 10.1109/SIM.1996.571100

M3 - Conference contribution

SN - 0-7803-3179-6

T3 - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

SP - 283

EP - 286

BT - Proceedings of Semiconducting and Semi-Insulating Materials Conference

PB - IEEE

T2 - Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials

Y2 - 29 April 1996 through 3 May 1996

ER -

Defect characterization in plastically deformed gallium arsenide

Abstract

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